Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer

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概要

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• This paper studies the thermal stability of InGaAs/InAlAs high electron mobility transistor (HEMT) structures with InAlAs and InAlP carrier supply layers. Although InAlAs is widely used as a carrier supply layer in conventional InP-based HEMTs, the mobility of such HEMTs gradually falls as the annealing temperature exceeds 600°C. Photoluminescence (PL) measurements and secondary ion mass spectrometry (SIMS) analysis reveal that this mobility decrease is caused by the diffusion of delta-doped Si into the InGaAs channel layer. The diffusion behavior of delta-doped Si in InAlP is examined for the first time and we clarify that the diffusion constant of Si in InAlP is about two orders of magnitude smaller than that in InAlAs. The mobility of a HEMT with InAlP carrier supply layer is unchanged throughout the entire annealing process (${\leqq}650$°C). The thermal stability of the HEMT is significantly improved by using an InAlP carrier supply layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-08-15

著者

• Oda Yasuhiro

  Ntt Photonics Laboratories Ntt Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• SUGIYAMA Hiroki

  NTT Photonics Laboratories

• Yokoyama Haruki

  Ntt Photonics Lab. Kanagawa Jpn

• Watanabe Kazuo

  Ntt Photonics Laboratories Ntt Corporation

• Watanabe Kazuo

  NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan

• Oda Yasuhiro

  NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan

• Sugiyama Hiroki

  NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan

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