Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-02-15

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• WATANABE Noriyuki

  NTT Photonics Laboratories

• Watanabe Noriyuki

  Ntt Photonics Laboratories Ntt Corporation

• Oda Yasuhiro

  Ntt Photonics Laboratories Ntt Corporation

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• YOKOYAMA Haruki

  NTT Photonics Laboratories, NTT Corporation

• YAGI Takuma

  NTT Advanced Technology Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Watanabe N

  Ntt Photonics Laboratories Ntt Corporation

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