Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP

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Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
In_Ga_As Quantum Point Contacts Utilizing Wrap-Gate Geometry
Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
A parallel-to-serial converter based on a differentially-operated optically clocked transistor array

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