Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• SAITOH Tadashi

  NTT Basic Research Laboratories, Physical Science Laboratory

• Enoki Takatomo

  Ntt Photonics Laboratories

• TAWARA Takehiko

  NTT Basic Research Laboratories, NTT Corporation

• Kobayashi Takashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• WANG Chengxin

  NTT Photonics Laboratories, NTT Corporation

• ENOKI Takotomo

  NTT Photonics Laboratories, NTT Corporation

• Makimura Takashi

  Ntt Basic Research Laboratories Ntt Corporation

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Tawara Takehiko

  Ntt Basic Research Laboratories Ntt Corporation

• Wang Chengxin

  Ntt Photonics Laboratories Ntt Corporation

• Saitoh Tadashi

  Ntt Basic Research Laboratories

• Tawara Takehiko

  Ntt Basic Res. Lab. Kanagawa Jpn

• SAITOH Tadashi

  NTT Basic Research Laboratories, NTT Corporation

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