Tawara Takehiko | Ntt Basic Res. Lab. Kanagawa Jpn

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概要

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著作論文

Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant
Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots
Energy Transfers between Er3+ Ions Located at the Two Crystalographic Sites of Er2O3 Grown on Si(111)
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells

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