MAKIMOTO Toshiki | NTT Basic Research Laboratories, NTT Corporation

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著作論文

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
In-Situ STM Observation of GaAs Surfaces after Nitridation
In-Situ STM Observation of GaAs Surfaces after Nitridation
In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
Annealing Properties of Si-Atomic-Layer-Doped GaAs
Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors

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