Nishikawa Atsushi | Ntt Basic Research Laboratories Ntt Corporation

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概要

• NISHIKAWA Atsushiの詳細を見る
• 同名の論文著者
• Ntt Basic Research Laboratories Ntt Corporationの論文著者

関連著者

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Nishikawa Atsushi

  Ntt Basic Research Laboratories Ntt Corporation

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kumakura Kazuhide

  Ntt Basic Research Laboratories Ntt Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories

• Kumakura Kazuhide

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Akasaka Tetsuya

  NTT Basic Research Laboratories

• Makimoto Toshiki

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Akasaka Tetsuya

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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著作論文

• High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
• Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
• p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
• High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
• High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
• $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications

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