Makimoto Toshiki | NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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概要

• Makimoto Toshikiの詳細を見る
• 同名の論文著者
• NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japanの論文著者

関連著者

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimoto Toshiki

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Kasu Makoto

  Ntt Basic Research Laboratories

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• KIDO Takatoshi

  Shonan Institute of Technology

• MATSUMOTO Nobuo

  Shonan Institute of Technology

• Taniyasu Yoshitaka

  Ntt Basic Research Laboratories Ntt Corporation

• Nishikawa Atsushi

  Ntt Basic Research Laboratories Ntt Corporation

• Yamauchi Yoshiharu

  Ntt Basic Research Laboratories

• Ueda Kenji

  Ntt Basic Research Laboratories Ntt Corporation

• Sasaki Satoshi

  Ntt Basic Research Laboratories

• Kumakura Kazuhide

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Maeda Narihiko

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Ye Haitao

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Ueda Kenji

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Kasu Makoto

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sasaki Satoshi

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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著作論文

• High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
• RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
• Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors

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