High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate

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概要

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• We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN $ p$–$i$–$n$ vertical conducting diode on $n$-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than $10^{17}$ cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage ($V_{\text{B}}$) and the on-state resistance ($R_{\text{on}}$), the figure of merit $V_{\text{B}}{}^{2}/R_{\text{on}}$ has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

• 2007-04-30

著者

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Nishikawa Atsushi

  Ntt Basic Research Laboratories Ntt Corporation

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• Kumakura Kazuhide

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Makimoto Toshiki

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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