High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
関連論文
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
- Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
- p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
- High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
- Flow-rate modulation epitaxy of wurtzite AlBN
- Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
- High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
- Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
- InGaN quantum wells with small potential fluctuation
- p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
- Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
- High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
- High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
- BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Interface Microstructure of MgB2/Al–AlOx/MgB2 Josephson Junctions Studied by Cross-Sectional Transmission Electron Microscopy
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Low-Temperature Growth of MgB2 Thin films with $T_{\text{c}}$ above 38 K
- Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance ($
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films