Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
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概要
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We have formed ohmic contacts to $p$-GaN using a strained $p$-InGaN contact layer, and achieved the lowest contact resistance of $1.1\times 10^{-6}$ $\Omega$-cm2 at room temperature by optimizing the contact layer thickness and its In mole fraction. We have also evaluated thermal stability of ohmic contacts to $p$-GaN using the strained $p$-InGaN contact layer. The contact resistance decreased to $2\times 10^{-7}$ $\Omega$-cm2 at 100°C, and increased with elevating temperature above 100°C. In the temperature range up to 400°C, the contact resistances of the samples with the $p$-InGaN contact layer were smaller than those of the samples without the contact layer. Furthermore, the ohmic characteristics of the strained $p$-InGaN contact layer were less degraded even after the thermal process, compared with those of the sample without a contact layer. These results indicate that the strained $p$-InGaN contact layer is favorable for practical application.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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