Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs

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概要

• 論文の詳細を見る

• The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen $\delta$-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.

• Japan Society of Applied Physicsの論文
• 2004-06-15

著者

• Onomitsu Koji

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• SAITO Hisao

  NTT Basic Research Laboratories

• RAMSTEINER Manfred

  Paul Drude Institute

• ZHU Hai-jun

  Paul Drude Institute

• KAWAHARAZUKA Atsushi

  Paul Drude Institute

• Okabe Takehito

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Horikoshi Yoshiji

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Ploog Klaus

  Paul Drude Institute

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Kawaharazuka Atsushi

  Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Zhu Hai-jun

  Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Makimoto Toshiki

  NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan

• Ploog Klaus

  Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Okabe Takehito

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

• Onomitsu Koji

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

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