Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
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Fujita Miki
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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HORIKOSHI Yoshiji
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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KAWAMOTO Noriaki
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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TATSUMI Tomohiko
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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YAMAGISHI Katsumi
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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Horikoshi Yoshiji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
関連論文
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
- Establishing and maintaining axial growth : wall mechanical properties and the cytoskeleton
- Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
- Compositional Nonuniformity in Molecular Beam Epitaxy Grown InAsSb on GaAs(111)A Substrates
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs