Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source

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概要

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• Epitaxial ZnO films have been grown on Si (111) substrates by molecular beam epitaxy using ozone as an oxygen source. An initial deposition of a Zn layer followed by its oxidation produces a superior template for the subsequent ZnO growth. The reflection high-energy electron diffraction measurement suggests that the initial Zn layer and ZnO film are rotated by 30° with respect to the Si substrate orientation. The X-ray diffraction measurement reveals that the as-grown ZnO films are strongly $c$-oriented and include no rotational domains. Although there exists a small trace of ZnO ($10\bar{1}1$) domains, it easily disappears upon annealing at 1100°C for 1 min after growth. Low-temperature photoluminescence measurements indicate that the emission property is improved significantly after annealing. The bound-exciton emission at 3.354 eV is dominant and its full-width at half maximum is as small as 11 meV.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-01-15

著者

• TATSUMI Tomohiko

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W

• Horikoshi Yoshiji

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Yamagishi Katsumi

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Kawamoto Noriaki

  Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase

• Horikoshi Yoshiji

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

• Furuta Miki

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

• Tatsumi Tomohiko

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

• Fujita Miki

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

• Kawamoto Noriaki

  Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan

関連論文

• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
• Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
• Compositional Nonuniformity in Molecular Beam Epitaxy Grown InAsSb on GaAs(111)A Substrates
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs

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