Compositional Nonuniformity in Molecular Beam Epitaxy Grown InAsSb on GaAs(111)A Substrates
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概要
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The compositional nonuniformity of InAsSb alloys on GaAs(111)A substrates grown by molecular beam epitaxy (MBE) has been investigated. In contrast to the three-dimensional (3D) island growth on GaAs(001) substrates, the alloy growth occurs in the two-dimensional (2D) growth mode from the initial stage when the GaAs(111)A substrate is used. The lattice constant fluctuation estimated from X-ray diffraction linewidths is much smaller in the alloys grown on (111)A substrates than in the alloys grown on (001) substrates, indicating that the InAsSb alloys grown on (111)A substrates are more homogeneous. We have also found that homogeneous InAsSb alloys are grown at lower temperatures when the (111)A substrates are used instead of the (001) substrates. Because the adhesion force of Sb atoms to the (111)A surface is much smaller than to the (001) surface, the desorption rate of Sb atoms from the (111)A surface should be much larger than that from the (001) surface. Even in the InAsSb alloys grown on (111)A substrates, however, a new inhomogeneity, which includes As-enriched stripes and As precipitates appears at low growth temperatures. This phenomenon is not associated with Sb surface segregation, but is induced by the excess As incorporation in the epilayer. The As-enriched stripes as well as the As precipitates can be avoided by optimizing the growth conditions. Thus, homogeneous InAsSb alloys are successfully grown even at temperatures as low as 370°C less than the critical temperature of 415°C which is obtained on GaAs(001) substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
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Horikoshi Yoshiji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Amano Hidetoshi
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Suzuki Ryo
Department Of Biological And Chemical Engineering Gunma University
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Suzuki Ryo
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Kuroki Toshihiro
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Nishinaga Jiro
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Amano Hidetoshi
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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