RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit

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Temperature dependent DC and RF characteristics of p-type diamond metal–semiconductor field-effect transistors (MESFETs) on hydrogen-terminated surfaces are investigated. The device is thermally stable up to 100 °C, because it does not deteriorate at all at higher temperatures. Temperature coefficients of transconductance ($g_{\text{m}}$), drain conductance ($g_{\text{ds}}$), gate–source capacitance ($C_{\text{gs}}$), gate–drain capacitance ($C_{\text{gd}}$), cut-off frequency ($ f_{\text{T}}$), and maximum drain current ($I_{\text{ds}}$) were obtained from small-signal equivalent circuit analysis. The cut-off frequency ($ f_{\text{T}}$) is almost totally independent of temperature. Intrinsic $g_{\text{m}}$, $g_{\text{ds}}$, and $C_{\text{gs}}$ decrease with increasing temperature. $C_{\text{gd}}$ is almost totally independent of temperature. The threshold voltage shifts to the negative side with increasing temperature. We propose a band model of an Al-gate contact/H-terminated diamond to explain the temperature dependence of these components.
2006-04-30