Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
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概要
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We investigated the $a$- and $c$-axis lattice constants of GaN buffer and 180-nm-thick p-InGaN layers grown on SiC and sapphire substrates using reciprocal space mapping of the X-ray diffraction intensity. It was found that the $a$-axis lattice constant of the GaN buffer layer on a SiC substrate is larger than those of unstrained GaN and a GaN buffer layer on a sapphire substrate. As a result, the p-InGaN layer on GaN/SiC is fully strained even at the In mole fraction of 9.0% where that on GaN/sapphire is relaxed. This result means that fewer defects are generated in p-InGaN on GaN/SiC at higher In mole fractions. This is another advantage of SiC substrate for npn-type GaN/InGaN heterojunction bipolar transistors, in addition to its high thermal conductivity. The collector current density dependence of current gain shows the ideality factor of 2 for GaN/InGaN HBTs on both SiC and sapphire substrates. This is ascribed to the recombination current at the emitter-base interface, which arises from the threading dislocations generated at the interface between the substrate and nitride buffer layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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KIDO Takatoshi
Shonan Institute of Technology
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MATSUMOTO Nobuo
Shonan Institute of Technology
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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