BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
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概要
- 論文の詳細を見る
BxGa1-xN ($x\sim 0.02$) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of $2\times 10^{8}$ cm-2 and the residual electron concentration of $9.4\times 10^{9}$ cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density ($2.9--4.2\times 10^{12}$ cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Akasaka Tetsuya
NTT Basic Research Laboratories
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