Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-15

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Saito Hironobu

  Fukushima Toyo Communication Equipment Co. Ltd.

• SAITO Hisao

  NTT Basic Research Laboratories

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Saito H

  Nec Corp. Ibaraki Jpn

• SAITO Hideaki

  Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimoto T

  Ntt Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

関連論文

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• Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
• Formation of Solid Solution of Al_Si_xN (0
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
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