Makimoto T | Ntt Basic Research Laboratories
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概要
関連著者
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Makimoto T
Ntt Basic Research Laboratories
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
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Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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SAITO Hisao
NTT Basic Research Laboratories
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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Kumakura K
Ntt Basic Research Laboratories
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Kasu M
Ntt Corp. Atsugi Jpn
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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Saito Hironobu
Fukushima Toyo Communication Equipment Co. Ltd.
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Saito H
Nec Corp. Ibaraki Jpn
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SAITO Hideaki
Laser Laboratory, Second Research Center, TRDI, Japan Defense Agency
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Onomitsu Koji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Okabe Takehito
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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BENCHIMOL Jean
NTT Basic Research Laboratories
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Benchimol J.l.
Ntt Basic Research Laboratories:france Telecom Cnet Bagneux Laboratories
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Okabe T
Faculty Of Engineering Daido Institute Of Technology
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Saito H
Ntt Basic Research Laboratories
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HORIKOSHI Yoshiji
School of Science and Engineering, Waseda University
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OKABE Takehito
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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HORIKOSHI Yoshiji
Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, W
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KAWAHARAZUKA Atsushi
Department of Electrical, Electronics and Computer Engineering. School of Science and Engineering, W
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ONOMITSU Koji
School of Science and Engineering, Waseda University
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OKABE Takehito
School of Science and Engineering, Waseda University
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SASAKI S.
NTT Basic Research Laboratories
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Horikoshi Yoshiji
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Kawaharazuka Atsushi
Department Of Electrical Electronics And Computer Engineering. School Of Science And Engineering Was
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Kasu M.
Ntt Basic Research Laboratories Ntt Corporation
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YE H.
NTT Basic Research Laboratories, NTT Corporation
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YAMAUCHI Y.
NTT Basic Research Laboratories, NTT Corporation
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MAEDA N.
NTT Photonics Laboratories, NTT Corporation
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CHANG Shi
NTT Basic Research Laboratories
著作論文
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Temperature dependent characteristics of diamond MESFET