Kasu Makoto | Ntt Basic Research Laboratories

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概要

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著作論文

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
Formation of Solid Solution of Al_Si_xN (0
Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
In-Situ STM Observation of GaAs Surfaces after Nitridation
In-Situ STM Observation of GaAs Surfaces after Nitridation
High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates
High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al_2O_3 Overlayer and its Electric Properties
Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Origin of Schottky Barrier Modification by Hydrogen on Diamond

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