Origin of Schottky Barrier Modification by Hydrogen on Diamond
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The origin of the Schottky barrier modification on diamond (100) surfaces by hydrogen is studied based on simplified interface models with the first-principles calculation. It is revealed that the estimated $S$-factor is rather negative for the ideal contact with no interfacial dangling bonds, while it approaches 1 when the interface is terminated by just hydrogen. The negative $S$-factor is thought to come from the formation of interfacial chemical bonds between the metal and the diamond. It is suggested that hydrogen-termination prevents such interfacial bond formation and makes the general metal induced gap state theory work, as well as passivates the interfacial dangling bond states which are the strong sources of the pinning of the Schottky barrier height.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
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