The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
スポンサーリンク
概要
- 論文の詳細を見る
The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about $\pm 33$%.
- Japan Society of Applied Physicsの論文
- 2003-12-15
著者
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Itoh Kohei
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Fujiwara Akira
Ntt Basic Research Laboratories Ntt Corporation
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Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Kageshima Hiroyuki
Ntt Basic Research Laboratories
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Takahashi Tomonori
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
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Uematsu Masashi
Ntt Basic Research Laboratories
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
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Takahashi Tomonori
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Itoh Kohei
Department of Applied Physics and CREST-JST, Keio University, Yokohama 223-8522, Japan
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Itoh Kohei
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
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