Strain Relaxation in MBE-Grown Si_<1-x>Ge_x/Si(100) Heterostructures by Annealing

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概要

• 論文の詳細を見る

• Strain relaxation in MBE-grown Si_<1-x>Ge_x/Si (100) strained-layer heterostructures by postgrowth annealing has been investigated using X-ray diffraction and Nomarski microscopy. The extent of the strain relaxation is found to be dependent on Ge composition and annealing temperatures. The strain relaxation model proposed by Dodson and Tsao is applied to our experimental data and good agreement is obtained.

• 社団法人応用物理学会の論文
• 1991-08-15

著者

• Fujita K

  Oki Electric Industry Co. Ltd. Tokyo

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Fujita K

  Department Of Material Chemistry Graduate School Of Engineering Kyoto University

• FUKATSU Susumu

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Fukatsu Shigeto

  Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

• YAGUCHI Hiroyuki

  Research Center for Advanced Science and Technology, The University of Tokyo

• ITO Ryoichi

  Research Center for Advanced Science and Technology, The University of Tokyo

• Yaguchi H

  Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita

• Yaguchi Hiroyuki

  Research Center For Advanced Science And Technology University Of Tokyo

• Fukatsu S

  Univ. Tokyo Tokyo Jpn

• Fujita K

  Univ. Tokyo Tokyo Jpn

• Fukatsu Susumu

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo:(present Address

• FUJITA Ken

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

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