Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CF_x Layer Deposited on Si and Si0_2

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Thermal reactions between a fluorocarbon (CF_x) layer formed with C_4F_8 magnetomicrowave plasma and Si and SiO_3 are studied by thermal desorption spectroscopy (TDS). Atomic compositions and core spectra of the CF_x. layer are measured by temperature-programmed X-ray photoelectron spectroscopy (TP-XPS) with concomitant desorption gas species analysis by quadrupole mass spectrometer. The TDS study reveals that the primary reaction products are SiF_4 in Si and SiF_4 and CO in SiO_2, and F generated from the CF_x layer is a primary reactive species contributing to the formation of the reaction products not only in Si but also in SiO_2. The TP-XPS study reveals that the drastic decrease of F/C ratio agrees with the desorption of SiF_4 and CO.
社団法人応用物理学会の論文
1994-12-30