Hirashita N | Oki Electric Industry Co. Ltd. Vlsi R&d Center

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著作論文

A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by In Situ Observation
In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy
X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si
Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CF_x Layer Deposited on Si and Si0_2
Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethyiorthosilicate

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