KANAMORI Jun | VLSI R&D Center, Oki Electric Industry Co., Ltd.

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概要

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著作論文

Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices
Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI
Role of Oxygen in Poly-Si Etching by Cl_2/O_2 Plasmas
Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
Roles of Ions and Radicals in Silicon Oxide Etching
Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
Characteristics of Very High-Aspect-Ratio Contact Hole Etching
Dry-Etching Mechanism of Sputtered Pb(Zr_Ti_x)O_3 Film
Fine Contact Hole Etching in Magneto-Microwave Plasma

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