HORIIKE Yasuhiro | Department of Electrical Engineering, Toyo University
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概要
関連著者
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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堀池 靖浩
広島大工
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
National Institute For Materials Science
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堀池 靖浩
物質･材料研究機構
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Horiike Yasuhiro
Faculty Of Engineering Toyo University
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Shindo H
Department Of Electronics Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Research Center For Integrated Systems Hiroshima University:(present Address)department Of Electrica
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Shindo H
Tokai Univ. Hiratsuka Jpn
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Horiike Yasuhiro
Toshiba Vlsi Research Center
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Shindo Haruo
Department Of Applied Physics Tokai University
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Shindo H
Yamaguchi Univ. Yamaguchi Jpn
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Takamura Yuzuru
Department Of Materials Science School Of Engineering The University Of Tokyo
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堀池 靖浩
物質・材料研究機構
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Shindo H
Samsung Yokohama Res. Inst. Yokohama Jpn
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SAKAUE Hiroyuki
Department of Electrical Engineering, Hiroshima University
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ICHIKI Takanori
Department of Electrical & Electronics Engineering, Toyo University
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Horiike Yasuhiro
Department Of Materials Science University Of Tokyo
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OGAWA Hiroki
Department of Surgery, Otsu Red Cross Hospital
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Shindo Haruo
Faculty of Agriculture, Yamaguchi University
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FUKASAWA Takayuki
Department of Electrical Engineering, Hiroshima University
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Shindo Haruo
Faculty Of Agriculture Nagoya University : (present Address) Faculty Of Agriculture Yamaguchi Univer
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Shingubara Shoso
Department of Electrical Engineering, Hiroshima University
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Ueda Masanori
Department Of Medicinal Chemistry Faculty Of Pharmaceutical Sciences The University Of Tokushima
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Nakamura A
Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University
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Baba Yoshinobu
Department Of Applied Chemistry Graduate School Of Engineering Nagoya University
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ICHIKI Takanori
the Department of Electric and Electronic Engineering, Tokyo University
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Narai Akira
Faculty Of Engineering Hiroshima University
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CHINZEI Yasuhiko
Department of Electrical & Electronics Engineering, Tokyo University
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KIKUCHI Jun
Axiomatic Inc.
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Shingubara Shoso
Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation
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Fukasawa Takayuki
Faculty Of Engineering Fukuyama University:(present Address)2nd Development Engineering Dpt. Tokyo E
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Chinzei Yasuhiko
Department Of Electrical & Electronics Engineering Tokyo University
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新宮原 正三
Hiroshima University Graduate School Of Adsm
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Fujii Takashi
Department Of Cardiology Hiroshima General Hospital
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堀池 靖浩
科学技術振興事業団戦略的基礎研究推進事業 科学技術振興事業団
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Kubota Kazuhiro
Department of Electrical Engineering, Hiroshima University
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NAKAMURA Akihiro
Department of Electrical Engineering, Hiroshima University
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Fujii Toru
General R&d Lab. Taiyo Yuden Co. Ltd.
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SAKAUE Hiroyuki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KIKUCHI Toshiaki
Department of Electrical & Electronics Engineering, Toyo University
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Kubota K
Department Of Biological And Chemical Engineering Faculty Of Technology Gunma University
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Kikuchi T
Department Of Applied Chemistry Faculty Of Science Science University Of Tokyo
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FUJII Syuitsu
ADTEC Co., Ltd.
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FUJII Takashi
Central Research Institute of Electric Power Industry
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Fujii Syuitsu
Adtec Co. Ltd.
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TANIGUCHI Kazutake
Department of Materials Science, School of Engineering, The University of Tokyo
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YANAGISAWA Michihiko
Speedfam Co., Ltd.
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Fujii T
Toyohashi Univ. Technol. Toyohashi Jpn
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Baba Yoshinobu
Department Of Applied Chemistry Graduate School Of Engineering Mext Innovative Research Center For P
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Kikuchi J
Axiomatic Inc. Tokyo Jpn
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Horiike Yasuhiro
National Inst. For Materials Sci. Ibaraki Jpn
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Horiike Yasuhiro
Biomaterials Center National Institute For Materials Science
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Fujii Toshio
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Limited
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Kikuchi Tsuneo
Faculty Of Engineering Tokyo Institute Of Technology
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Kikuchi Jun
Axiomatec Inc.
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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Fujii T
Central Research Institute Of Electric Power Industry
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Sakaue H
Hiroshima University Graduate School Of Adsm
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Furuta Shigeru
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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YOSHIKI Hiroyuki
Department of Electrical and Electronic Engineering, Tsuruoka National College of Technology
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YAMAMOTO Jin
Process Equipment Engineering Div., Canon Sales Co., Inc.
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JIWARI Nobuhiro
Department of Electrical Engineering, Hiroshima University
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NARAI Akira
Department of Electrical Engineering, Hiroshima University
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KOTO Makoto
Department of Electrical Engineering, Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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SANO ATSUSHI
Department of Cardiothoracic Surgery, The University of Tokyo Graduate School of Medicine
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Koto Makoto
Department Of Electrical Engineering Hiroshima University
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Yamamoto J
Process Equipment Engineering Div. Canon Sales Co. Inc.
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
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HAYAMA Tetsuya
Department of Materials Science, School of Engineering, The University of Tokyo
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OKI Akio
Department of Materials Engineering, The University of Tokyo
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TOKUYAMA Yusuke
Department of Materials Engineering, School of Engineering, The University of Tokyo
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FUJIMURA Shuzo
Process Development Division, Fujitsu Ltd.
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Fujimura Shuzo
Precess Development Division C850 Fujitsu Limited
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Fujimura Shuzo
Process Development Division Fujitsu Ltd.
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Fujimura Shuzo
Process Development Div. C850 Fujitsu Ltd.
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Shindo Haruo
Faculty Of Engineering Fukuyama University
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URAYAMA Takuya
Department of Applied Physics, Tokai University
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ISEDA Seiji
Department of Electrical Engineering, Hiroshima University
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ASAMI Kazushi
Department of Electrical Engineering, Hiroshima University
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YAMAMOTO Jirou
Department of Electrical Engineering, Hiroshima University
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Kurosaki Ryo
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Sano A
Shizuoka Univ. Shizuoka Jpn
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Sano Atsushi
Department Of Cardiothoracic Surgery The University Of Tokyo Graduate School Of Medicine
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Asami K
The Institute Of Scientific And Industrial Research Osaka University
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Urayama Takuya
Department Of Applied Physics Tokai University:research And Development Division Adtec Co. Ltd.
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Hirose M
Materials Research Center Tdk Corporation
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SAWA Yoshio
Tsukuba Research, Drug Safety Research Laboratories, Eisai Co., Ltd.
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高村 禅
北陸先端科学技術大学院大学
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Fujii Takashi
Department Of Medicine And Clinical Science Yamaguchi University Graduate School Of Medicine
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高村 禅
北陸先端大
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UENO Nobuo
Department of Materials Technology, Faculty of Engineering, Chiba University
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Ueno Nobuo
Department Of Applied Physics Tohoku University
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Ueno Nobuo
Department Of Materials Science Faculty Of Engineering Chiba University
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KUSABA Kouta
Department of Applied Physics, Tokai University
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SHINDO Haruo
Department of Applied Physics, Tokai University
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FURUKAWA Masakazu
Process Equipment Engineering Div., Canon Sales Co., Inc.
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KOROMOGAWA Takashi
Department of Applied Physics, Tokai University
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石川 賢司
四日市大学総合政策学部
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Koromogawa T
Tokai Univ. Hiratsuka Jpn
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Koromogawa Takashi
Department Of Applied Physics Tokai University
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YAMASHITA Akihito
Department of Applied Physics, Tokai University
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Matsumoto Hiroyuki
Department of Electrical Engineering, Toyo University
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FUKASAWA Takayuki
2nd Development Engineering Dept., Tokyo Electron Yamanshi Limited
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NOUDA Tatuki
Department of Electrical Engineering, Hiroshima University
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IWASAWA Hiroaki
Department of Electrical Engineering, Hiroshima University
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SHOJI Tatsuo
Plasma Science Center, Nagoya University
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Aoki M
Hitachi Ltd. Tokyo Jpn
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Aoki Masaru
Department Of Chemistry Graduate School Of Arts And Sciences The University Of Tokyo
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Ogawa Hiroki
Precess Development Division C850 Fujitsu Limited
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Taino Mitsuhiko
Kek High Energy Accelerator Research Organization
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Kusaba K
Tokai Univ. Hiratsuka Jpn
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Kusaba Kouta
Department Of Applied Physics Tokai University
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Aoki M
Univ. Tokyo Tokyo Jpn
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KOBAYASHI YASUO
Department of Dentistry Oral Surgery, Nagano Municipal Hospital
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Furukawa Masakazu
Process Equipment Engineering Div. Cannon Sales Co. Inc.
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AOYAGI Hitoshi
Department of Applied Physics, Tokai University
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OGATA Makoto
Department of Electrical & Electronics Engineering, Tokyo University
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SUNADA Tsuyoshi
Research and Development Division, ULVAC Japan Ltd.
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ITOH Masahiro
Research and Development Division, ULVAC Japan Ltd.
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HAYASHI Toshio
Research and Development Division, ULVAC Japan Ltd.
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ITATANI Ryohei
Niihama National College of Technology
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KUROSAKI Ryo
Manufacturing Technology Division, Fujitsu Ltd.
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KIKUCHI Jyun
Manufacturing Technology Division, Fujitsu Ltd.
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FUKAZAWA Takayuki
2nd Development Engineering Dpt, Tokyo Electron
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KIZUKA Tokushi
Department of Applied Physics, School of Engineering, Nagoya University
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Aoyagi Hitoshi
Department Of Applied Physics Tokai University
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DOTERA Tomonari
Saitama Study Center, The University of the Air
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TAKAI Madoka
Department of Materials Engineering, The University of Tokyo
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ITO Yoshitaka
Research & Development Center, Shindengen Kogyo Corp.
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NAKAGAWA Hideo
Semiconductor Company, Matsushita Electric Industrial Co. Ltd.
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MATSUI Tetsuyuki
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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KIKUCHI Jun
Manufacturing Technology Division, Fujitsu Ltd.
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NAGASAKA Mitsuaki
Manufacturing Technology Division, Fujitsu Ltd.
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YANO Hiroshi
Manufacturing Technology Division, Fujitsu Ltd.
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Iida S
Toyama Univ. Toyama Jpn
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Iida Shinya
Speedfam Co. Ltd.
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Nagasaka Mitsuaki
Manufacturing Technology Division Fujitsu Ltd.
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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HAYASHI Toshio
Institute for Semiconductor Technologies, ULVAC, Inc.
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HARADA Yoshiya
Department of Materials Science, Faculty of Engineering, Chiba University
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Ogawa Hiroki
Department Of Material Science School Of Engineering University Of Tokyo
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Matsui Toshiaki
Communication Research Laboratory Ministry Of Posts And Telecommunications
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Ichihashi Hideki
Faculty Of Engineering Hiroshima University
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Shingubara Shoso
Department Of Electrical Engineering Hiroshima University
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Takayanagi Satoshi
Department Of Electrical Engineering Toyo University
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Kikuchi Jun
Manufacturing Technology Division Fujitsu Ltd.
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Aoki Masaru
Advanced Display Incorporated
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MORIKAWA Yasuhiro
Department of Electrical Engineering, Toyo University
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SHIBAYAMA Toshikazu
Department of Electrical Engineering, Toyo University
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ITA Hirotsugu
Department of Electrical Engineering, Toyo University
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Chang Hong-young
Department Of Physics Korea Advanced Institute Of Science And Technology
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Ikeda K
Technical Office Tsuruoka National College Of Technology
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Niimi Hirofumi
Department of Applied Physics, Tokai University
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SAWA Yoshio
Department of Applied Physics, Tokai University
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KUZUMAKI Toru
Department of Materials Science, School of Engineering, The University of Tokyo
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KIKUCHI Jun
Process Development Division, Fujitsu Ltd.
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Ogawa H
Ocean Research Institute University Of Tokyo
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UJIIE Takekazu
Department of Elctrical and Electronics Engineering, Toyo University
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OGAWA Hiroki
Process development Division C850 FUJITSU LIMITED
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ISHIKAWA Kenji
Process development division C850, Fujitsu Limited
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Kikuchi Jun
Process Development Division Fujitsu Ltd.
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SAWA Yoshio
Faculty of Engineering, Fukuyama University
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Seo Sang-hun
Department Of Physics Korea Advanced Institute Of Science And Technology
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Aoki M
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Harada Y
Life Culture Department Seitoku University
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Ogata Makoto
Department Of Electrical & Electronics Engineering Tokyo University
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Shoji Tatsuo
Plasma Science Center Nagoya University
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Nouda Tatuki
Department Of Electrical Engineering Hiroshima University
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Yano H
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Matsui T
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Niimi Hirofumi
Department Of Applied Physics Tokai University
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Hayama Tetsuya
Department Of Materials Science School Of Engineering The University Of Tokyo
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Harada Yoshiya
Department Of Chemistry College Of Arts And Sciences The University Of Tokyo
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Kuzumaki Toru
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
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Kuzumaki Toru
Department Of Materials Sci. Graduate School Of Engineering The University Of Tokyo
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Ito Yoshitaka
Research & Development Center Shindengen Kogyo Corp.
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LEE Pyung-Woo
Department of Physics, Korea Advanced Institute of Science and Technology
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KIM Sung-Sik
Department of Physics, Korea Advanced Institute of Science and Technology
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CHANG Choong-Seock
Department of Physics, Korea Advanced Institute of Science and Technology
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Matsui Takayuki
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Kim Sung-sik
Department Of Electrical And Computer Engineering Yonsei University
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Kim Sung-sik
Department Of Physics Korea Advanced Institute Of Science And Technology
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Lee Pyung-woo
Department Of Physics Korea Advanced Institute Of Science And Technology:hyundai Electronic Industry
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IKEDA Koichi
Technical Office, Tsuruoka National College of Technology
著作論文
- Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
- Measurement of Fluorocarbon Radicals Generated from C_4F_8/H_2 Inductively Coupled Plasma : Study on SiO_2 Selective Etching Kinetics
- Microloading Effect in Highty Selective Si0_2 Contact Hole Etching Employing Inductively Coupled Plasma
- Effect of Magnetic Field to Etching Characteristics of Inductively Coupled Plasma ( Plasma Processing)
- High Rate and Highly Selective SiO_2 Etching Employing Inductively Coupled Plasma
- RF Self-Bias Characteristics in Inductively Coupled Plasma
- Al Etching Characteristics Ernploying Helicon Wave Plasma
- Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
- Gap-filling of Cu Employing Sustained Self-Sputtering with Inductively Coupled Plasma Ionization
- A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces
- Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
- Development and Plasma Characteristics Measurement of Planar-Type Magnetic Neutral Loop Discharge Etcher
- Highly Selective SiO_2/Si Etching and Related Kinetics in Time-Modulated Helicon Wave Plasma
- SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
- Mechanism of Cloudy Surface Generation on Si Wafer Employing Numerically Controlled Local Dry Etching (NC-LDE)
- In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas
- Concentration and Injection of Long Deoxyribonucleic Acid Molecules at the Interface of Micro- and Nano-channels
- Curvature Entropy Trapping of Long DNA under Hydrodynamic Flows in Microfluidic Devices
- Fluorescence Emission Control of Long DNA Molecules Adsorbed on microelectrode Surfaces by External Voltage
- Healthcare Chip for Checking Health Condition from Analysis of Trace Blood Collected by Painless Needle
- Study on the Mechanisms of Chemical Mechanical Polishing on Copper and Aluminum Surfaces Employing In Situ Infrared Spectroscopy
- Molecular Detection in a Microfluidic Device by Streaming Current Measurements
- Translocation of a Long DNA Chain Passing Through a Nanofabricated Pore
- A Study on Mechanism of Chemical Mechanical Polishing on Al and Cu Surfaces Employing In-situ Infrared Spectroscopy
- Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
- Heliconwave Plasma Which Contains Negative Ion
- Biochip Which Examines Hepatic Function by Employing Colorimetric Method
- Etching Reactivity of Negative Ions Generated in Cl_2 Downstream Plasma
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation
- Excitation of Sheath Oscillating Current by Superimposing Pulse Voltage
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon
- Fabrication of Quartz Microcapillary Electrophoresis Chips Using Plasma Etching
- Gap-Filling of Cu Employing Self-Sustained Sputtering with ICP Ionization
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Silicon Etching Employing Negative Ion in SF_6 Plasma
- Study on the Mechanism of Silicon Chemical Mechanical Polishing Employing In Situ Infrared Spectroscopy
- Selective Processing of Individual Carbon-Nanotubes Using Atomic Force Microscopy Installed in Transmission Electron Microscope
- A New Inside-Type Segmented Coil Antenna for Uniformity Control in a Large-Area Inductively Coupled Plasma
- Generation of Integrated Atmospheric-Pressure Microplasmas
- Localized Plasma Processing of Materials Using Atmospheric-Pressure Microplasma Jets
- Localized Removal of a Photoresist by Atmospheric Pressure Micro-plasma Jet Using RF Corona Discharge
- Conelike Defect in Deep Quartz Etching Employing Neutral Loop Discharge
- Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF_6/H_2 Downstream Plasma
- Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement : Etching and Deposition Technology
- Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement
- Characteristics of Very High-Aspect-Ratio Contact Hole Etching
- Photoexcited Anisotropic Etching of Single-Crystalline Silicon
- High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas