Kikuchi J | Axiomatic Inc. Tokyo Jpn
スポンサーリンク
概要
関連著者
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Kikuchi J
Axiomatic Inc. Tokyo Jpn
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FUJIMURA Shuzo
Process Development Division, Fujitsu Ltd.
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Fujimura Shuzo
Precess Development Division C850 Fujitsu Limited
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Fujimura Shuzo
Process Development Division Fujitsu Ltd.
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Fujimura Shuzo
Process Development Div. C850 Fujitsu Ltd.
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KIKUCHI Jun
Manufacturing Technology Division, Fujitsu Ltd.
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YANO Hiroshi
Manufacturing Technology Division, Fujitsu Ltd.
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Horiike Yasuhiro
National Institute For Materials Science
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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Kikuchi Jun
Manufacturing Technology Division Fujitsu Ltd.
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堀池 靖浩
広島大工
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Yano H
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Research Center For Integrated Systems Hiroshima University:(present Address)department Of Electrica
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KIKUCHI Jun
Process Development Division, Fujitsu Ltd.
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Kikuchi Jun
Process Development Division Fujitsu Ltd.
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堀池 靖浩
物質･材料研究機構
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Kanai M
Inst. Physical And Chemical Res. (riken) Saitama Jpn
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Fukata N
Univ. Tsukuba Tsukuba Jpn
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Fukata Naoki
Institute For Materials Research Tohoku University
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Kawai M
Riken (inst. Physical And Chemical Res.) Saitama Jpn
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Murakami K
静岡大学電子工学研究所
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Sasaki S
Institute Of Materials Science University Of Tsukuba
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FUJIMURA Shuzo
Basic Process Development Div.
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CHINZEI Yasuhiko
Department of Electrical & Electronics Engineering, Tokyo University
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Kawai Masayuki
Faculty Of Science Tokai University
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MURAKAMI Kouichi
Institute of Materials Science, University of Tsukuba, Tsukuba Academic City
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NAGASAKA Mitsuaki
Manufacturing Technology Division, Fujitsu Ltd.
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Nagasaka Mitsuaki
Manufacturing Technology Division Fujitsu Ltd.
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Horiike Yasuhiro
Faculty Of Engineering Toyo University
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KITAJIMA Masahiro
National Research Institute for Metals
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Murakami Kouichi
Institute Of Materials Science University Of Tsukuba
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Murakami Kouichi
Institute Of Material Science University Of Tsukuba
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Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
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ISHIOKA Kunie
National Research Institute for Metals
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Sasaki S
Ntt System Electronics Lab. Kanagawa Jpn
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Kawai M
Institute Of Molecular And Cellular Biosciences University Of Tokyo
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Kurosaki Ryo
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Ishioka Kunie
National Institute For Materials Sciences Japan.
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Chinzei Yasuhiko
Department Of Electrical & Electronics Engineering Tokyo University
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Izumi K
National Institute For Materials Science
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Murakami K
Research Institute Of Electronics Shizuoka University
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Ishioka K
National Res. Inst. Metals Tsukuba Jpn
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Kinugasa Masanori
Research An Development Tayca Co. Ltd.
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Kitajima Masahiro
National Institute For Materials Sciences Japan.
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Ishioka Kunie
National Institute for Materials Science
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Kitajima Masahiro
National Defense Academy of Japan, Yokosuka, Kanagawa 239-8686, Japan
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Hosono H
Materials And Structures Laboratory Tokyo Institute Of Technology
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Shindo H
Tokai Univ. Hiratsuka Jpn
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Shindo H
Yamaguchi Univ. Yamaguchi Jpn
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Shindo Haruo
Department Of Applied Physics Tokai University
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Shingubara Shoso
Department of Electrical Engineering, Hiroshima University
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ICHIKI Takanori
Department of Electrical & Electronics Engineering, Toyo University
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KOBAYASHI YASUO
Department of Dentistry Oral Surgery, Nagano Municipal Hospital
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Shindo H
Department Of Electronics Faculty Of Engineering Hiroshima University
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KUROSAKI Ryo
Manufacturing Technology Division, Fujitsu Ltd.
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KIKUCHI Jyun
Manufacturing Technology Division, Fujitsu Ltd.
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IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
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FUKAZAWA Takayuki
2nd Development Engineering Dpt, Tokyo Electron
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ICHIKI Takanori
the Department of Electric and Electronic Engineering, Tokyo University
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HANEDA Hajime
National Institute for Materials Science
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HORIIKE Yasuhiro
Electrical & Electronics Engineering, Toyo University
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IGA Masao
Manufacturing Technology Division, FUJITSU LIMITED
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OGAWA Hiroki
Basic Process Development Division, FUJITSU LIMITED
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SUZUKI Masafumi
Manufacturing Technology Division, Fujitsu Ltd.
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Iga Masao
Manufacturing Technology Division Fujitsu Limited
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NAKAMURA Kazutaka
National Research Institute for Metals
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Shingubara Shoso
Department Of Electrical Engineering Hiroshima University
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Shingubara Shoso
Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation
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Sasaki Shinichi
Institute Of Materials Science University Of Tsukuba
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SASAKI Shin-ichi
Institute of Materials Science, University of Tsukuba
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Haneda H
Sensor Materials Center National Inst. For Materials Sci.
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Haneda Hajime
National Institute For Material Science
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Ichiki T
Univ. Tokyo Tokyo Jpn
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Ichiki Takanori
Department Of Electric And Electronic Engineering Toyo University
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Asanome Hiroshi
Central Laboratory, Toshiba Machine. Corporation 2068-3, Ooka, Numazu 410, Japan
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Kurosaki Ryo
Process Fabric. Division Fujitsu Corporation 1015, Odanaka, Nakahara, Kawasaki 211, Japan
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Fukazawa Takayuki
2nd Development Engineering Dpt Tokyo Electron
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Nakamura Kazutaka
National Research Institute Of Metals
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Asanome Hiroshi
Central Laboratory Toshiba Machine.corporation
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Shindo Haruo
Department Of Applied Physics
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Ogawa Hiroki
Basic Process Development Division Fujitsu Limited
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Suzuki Masafumi
Manufacturing Technology Division Fujitsu Ltd.
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Ikegami Naokatsu
Vlsi R〓d Center Oki Electric Industry Co. Ltd.
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Ikegami Naokatsu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Kobayashi Yasuo
Department Of Applied Biochemistry Hiroshima University
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Kobayashi Yasuo
Department Of Anesthesia Asahikawa City Hospital
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Ichiki Takanori
Department of Bioengineering, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
著作論文
- SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
- Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
- Cleaning of Silicon Surfaces by NF_3 Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Native Oxide Removal on Si Surfaces by NF_3-Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Effects of H_2O on Atomic Hydrogen Generation in Hydrogen Plasma
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas