High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas
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概要
- 論文の詳細を見る
The SiO2 film deposition employing inductively coupled plasma (ICP) with SiCl2H2/O2 occurred rapidly in the low-density plasma region due to production of precursors of SiCl2H2Ox (x=1–4). In an ICP CVD apparatus made with optimized distances between the antenna and the stage, and between the SiCl2H2 gas ring and the stage, a SiO2 film was with high deposition rate of more than 1 µm/min, 1.5 times the BHF etch rate of thermal oxide, and low Cl inclusion at a pressure of around 0.1 Torr. To supply ions to the Si wafer located in the ion-deficient plasma region, another time-modulated ICP antenna was set near the stage. Since deposition rate decreased with increasing wafer temperature, the laser the interference measurement of a Si wafer set on an RF-biased stage revealed the importance of the tight adhesion of the wafer to the stage. Ar+ ion bombardment during discharge on and off-time of 5 µs enabled us to fill Si trenches with SiO2 at a V dc of 500 V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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Shingubara Shoso
Department of Electrical Engineering, Hiroshima University
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KOBAYASHI YASUO
Department of Dentistry Oral Surgery, Nagano Municipal Hospital
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CHINZEI Yasuhiko
Department of Electrical & Electronics Engineering, Tokyo University
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Kikuchi J
Axiomatic Inc. Tokyo Jpn
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Horiike Yasuhiro
National Institute For Materials Science
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Research Center For Integrated Systems Hiroshima University:(present Address)department Of Electrica
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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Shingubara Shoso
Department Of Electrical Engineering Hiroshima University
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Shingubara Shoso
Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation
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KIKUCHI Jun
Process Development Division, Fujitsu Ltd.
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Kikuchi Jun
Process Development Division Fujitsu Ltd.
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堀池 靖浩
広島大工
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Kurosaki Ryo
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Chinzei Yasuhiko
Department Of Electrical & Electronics Engineering Tokyo University
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Asanome Hiroshi
Central Laboratory, Toshiba Machine. Corporation 2068-3, Ooka, Numazu 410, Japan
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Kurosaki Ryo
Process Fabric. Division Fujitsu Corporation 1015, Odanaka, Nakahara, Kawasaki 211, Japan
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Asanome Hiroshi
Central Laboratory Toshiba Machine.corporation
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Kobayashi Yasuo
Department Of Applied Biochemistry Hiroshima University
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Kobayashi Yasuo
Department Of Anesthesia Asahikawa City Hospital
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