Atomic Layer Controlled Digital Etching of Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-11-20

著者

• YAMAMOTO Jin

  Process Equipment Engineering Div., Canon Sales Co., Inc.

• HORIIKE Yasuhiro

  Department of Electrical Engineering, Toyo University

• SAKAUE Hiroyuki

  Department of Electrical Engineering, Hiroshima University

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Yamamoto J

  Process Equipment Engineering Div. Canon Sales Co. Inc.

• ASAMI Kumiko

  The Institute of Scientific and Industrial Research, Osaka University

• Horiike Yasuhiro

  Department Of Electrical & Electronics Engineering Tokyo University

• Horiike Yasuhiro

  Faculty Of Engineering Hiroshima University

• Horiike Yasuhiro

  Department Of Electrical Engineering Toyo University

• ISEDA Seiji

  Department of Electrical Engineering, Hiroshima University

• ASAMI Kazushi

  Department of Electrical Engineering, Hiroshima University

• YAMAMOTO Jirou

  Department of Electrical Engineering, Hiroshima University

• 堀池 靖浩

  広島大工

• Asami K

  The Institute Of Scientific And Industrial Research Osaka University

• Hirose M

  Materials Research Center Tdk Corporation

• Sakaue Hiroyuki

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Iseda Seiji

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

関連論文

• Ashing Properties in a Surface-Wave Mode Plasma with a Quartz Window
• Ashing Properties in a Surface-Wave Mode Plasma with a High-Permittivity Alumina Window : Semiconductors
• Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing
• Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
• Measurement of Fluorocarbon Radicals Generated from C_4F_8/H_2 Inductively Coupled Plasma : Study on SiO_2 Selective Etching Kinetics
• Microloading Effect in Highty Selective Si0_2 Contact Hole Etching Employing Inductively Coupled Plasma
• Effect of Magnetic Field to Etching Characteristics of Inductively Coupled Plasma ( Plasma Processing)
• High Rate and Highly Selective SiO_2 Etching Employing Inductively Coupled Plasma
• RF Self-Bias Characteristics in Inductively Coupled Plasma
• Al Etching Characteristics Ernploying Helicon Wave Plasma
• Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor
• Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Well-size-controlled Golloidal Gold nanoparticles Dispersed in Organic Solvents
• Self-Organized Gold Nanodots Array on a Silicon Substrate and Its Mechanical Stability
• Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array
• Self-Organization of a Two-Dimensional Array of Gold Nanodots Encapsulated by Alkanethiol
• Ordered Two-Dimensional Nanowire Array Formation Using Self-Organized Nanoholes of Anodically Oxidized Aluminum
• Highly Selective SiO_2 Etching Using CF_4/C_2H_4
• Gap-filling of Cu Employing Sustained Self-Sputtering with Inductively Coupled Plasma Ionization
• A Model for Resolution Dependent Roughness Values Measured by an Optical Profiler for Specific Surfaces
• Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
• Development and Plasma Characteristics Measurement of Planar-Type Magnetic Neutral Loop Discharge Etcher
• Highly Selective SiO_2/Si Etching and Related Kinetics in Time-Modulated Helicon Wave Plasma
• SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
• Mechanism of Cloudy Surface Generation on Si Wafer Employing Numerically Controlled Local Dry Etching (NC-LDE)
• In-Situ X-Ray Photoelectron Spectroscopy of Reactive-Ion-Etched Surfaces of Indium-Tin Oxide Film Employing Alcohol Gas
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Concentration and Injection of Long Deoxyribonucleic Acid Molecules at the Interface of Micro- and Nano-channels
• Curvature Entropy Trapping of Long DNA under Hydrodynamic Flows in Microfluidic Devices
• Fluorescence Emission Control of Long DNA Molecules Adsorbed on microelectrode Surfaces by External Voltage
• Healthcare Chip for Checking Health Condition from Analysis of Trace Blood Collected by Painless Needle
• Study on the Mechanisms of Chemical Mechanical Polishing on Copper and Aluminum Surfaces Employing In Situ Infrared Spectroscopy
• Molecular Detection in a Microfluidic Device by Streaming Current Measurements
• Translocation of a Long DNA Chain Passing Through a Nanofabricated Pore
• A Study on Mechanism of Chemical Mechanical Polishing on Al and Cu Surfaces Employing In-situ Infrared Spectroscopy
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Luminescence from Thermally Oxidized Porous Silicon
• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on a NH_4F-Treated Si(111) Surface
• Amorphous Silicon Static Induction Transistor
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
• Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
• Heliconwave Plasma Which Contains Negative Ion
• Biochip Which Examines Hepatic Function by Employing Colorimetric Method
• Etching Reactivity of Negative Ions Generated in Cl_2 Downstream Plasma
• Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
• Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation
• Excitation of Sheath Oscillating Current by Superimposing Pulse Voltage
• Band-Gap Energy and Effecive Mass of BGaN
• Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy
• Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
• Atomic Layer Controlled Digital Etching of Silicon
• Anomalous Hydrodynamic Behavior of Smectic Liquid Crystals at Low Frequencies
• Apparatus for Measurement of Complex Shear Modulus of Liquid Crystals at Low Frequencies : Physical Acoustics
• Fabrication of Quartz Microcapillary Electrophoresis Chips Using Plasma Etching
• Gap-Filling of Cu Employing Self-Sustained Sputtering with ICP Ionization
• In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
• Silicon Etching Employing Negative Ion in SF_6 Plasma
• Study on the Mechanism of Silicon Chemical Mechanical Polishing Employing In Situ Infrared Spectroscopy
• Selective Processing of Individual Carbon-Nanotubes Using Atomic Force Microscopy Installed in Transmission Electron Microscope
• A New Inside-Type Segmented Coil Antenna for Uniformity Control in a Large-Area Inductively Coupled Plasma
• Generation of Integrated Atmospheric-Pressure Microplasmas
• Localized Plasma Processing of Materials Using Atmospheric-Pressure Microplasma Jets
• Localized Removal of a Photoresist by Atmospheric Pressure Micro-plasma Jet Using RF Corona Discharge
• Conelike Defect in Deep Quartz Etching Employing Neutral Loop Discharge
• Numerically Controlled Dry Etching Technology for Flattening of Si Wafer which Employs SF_6/H_2 Downstream Plasma
• Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement : Etching and Deposition Technology
• Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement
• Characteristics of Very High-Aspect-Ratio Contact Hole Etching
• Photoexcited Anisotropic Etching of Single-Crystalline Silicon
• High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas
• Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry

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