Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• HIROSHIMA Masahito

  Department of Electrical Engineering, Hiroshima University

• YASAKA Tatsuhiro

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• Hirose M

  Materials Research Center Tdk Corporation

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Yasaka Tatsuhiro

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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