Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

スポンサーリンク

概要

• 論文の詳細を見る
• 2000-08-28

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Murakami H.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI H.

  Department of Physics, Rikkyo University

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Murakami H

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ikeda M.

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• IKEDA M.

  Department of Electrical Engineering, Hiroshima University

• KOHNO A.

  Department of Applied Physics, Fukuoka University

• MIYAZAKI S.

  Department of Electrical Engineering, Hiroshima University

• HIROSE M.

  Department of Electrical Engineering, Hiroshima University

• NISHIYAMA H.

  Department of Electrical Engineering, Hiroshima University

• Kohno A.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose M.

  Department Of Electrical Engineering Hiroshima University

• Ikeda M.

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Murakami H.

  Department Of Physics Rikkyo University

• Nishiyama H.

  Department Of Electrical Engineering Hiroshima University

関連論文

• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Luminescence from Thermally Oxidized Porous Silicon
• Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
• Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Phonon Interaction in the Luminescence of Porous Silicon
• Reabsorption of Visible Luminescence in Porous Si
• Visible Photoluminescence from Porous Silicon
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Optically Interconnected Kohonen Net for Pattern Recognition
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
• Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
• Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• The CALET Mission for Observing High Energy Cosmic Rays on Japanese Experiment Module of ISS
• Corotating Ion Events Associated with Cosmic Ray Modulation
• High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
• Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
• Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
• Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
• RELATIONSHIP BETWEEN THE CONTENT OF FORSKOLIN AND GROWTH ENVIRONMENTS IN CLONALLY PROPAGATED COLEUS FORSKOHLII BRIQ

もっと見る 閉じる

スポンサーリンク