The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)

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概要

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• Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO_2 layer sandwiched with Pt electrodes has been measured systematically before and after thermal anneal in different ambiences. With H_2 anneal at 400℃, the current level in the high-resistive state (HRS) was significantly decreased while little change in the low-resistive state (LRS) was observable. As a result, the switching ratio over 7 order of magnitude in current level was obtained. From the analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic conduction while, in the HRS after H_2 anneal, charge trapping became significant as a result of significant decrease in the current level. In a separate experiment, a partial reduction of TiO_2 was detected by high-resolution X-ray photoelectron spectroscopy (XPS) measurements after switching from HRS to LRS by using a mercury probe as a top electrode, which is associated with the filament formation.

• 2010-06-23

著者

• MAKIHARA Katsunori

  Hiroshima University

• MIYAZAKI Seiichi

  Hiroshima University

• Makihara Katsunori

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• WEI Guobin

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• GOTO Yuta

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akiko

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akio

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Makihara Katsunori

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Ohta Akiko

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Goto Yuta

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ohta Akio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Wei Guobin

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Makihara Katsunori

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Makihara Katsuonri

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Makihara Katsunori

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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