Higashi Seiichiro | Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

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概要

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著作論文

The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
Overdense Plasma Production Using Electron Cyclotron Waves
Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
Native Oxidation Growth on Ge(111) and (100) Surfaces
Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication
Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation
Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium--Yttrium Mixed Oxide
Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-Nitrided Si(100)
Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases

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