Higashi Seiichiro | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

スポンサーリンク

概要

関連著者

もっと見る

著作論文

In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
Overdense Plasma Production Using Electron Cyclotron Waves
New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
Native Oxidation Growth on Ge(111) and (100) Surfaces
Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication
Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation
Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation
Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique
Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium--Yttrium Mixed Oxide
Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-Nitrided Si(100)
Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films
Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases
In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication (Special Issue : Dry Process)

もっと見る

スポンサーリンク