Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes

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概要

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• We have fabricated metal--insulator--metal (MIM) diodes with a radio frequency (RF) sputtered Si oxide (SiO<inf>x</inf>) dielectric layer and studied the impact of three kinds of top electrodes (Ti, TiN, and Pt) on the resistive switching characteristics of the MIM diodes by current--voltage (I--V) measurements. For the MIM diodes with Ti-based electrodes, a significant increase in the initial current level and a decrease in the ON/OFF resistance rate were observed as compared to those of the reference MIM diodes with the Pt top electrodes. To gain a better understanding of the changes in the current levels with the top electrodes, the chemical bonding features in the region near the interface between the top electrode and SiO<inf>x</inf>layer were investigated using hard X-ray photoemission spectroscopy (HAXPES) under synchrotron radiation (h\nu = 7939 eV). From HAXPES analyses, it was found that the SiO<inf>x</inf>surface partially reacted with the Ti and TiN top electrodes during the deposition. Due to the formation of a TiO<inf>x</inf>barrier layer at the interface between the TiN top electrode and SiO<inf>x</inf>layer, distinct bi-polar type resistive switching with lower operation voltages below 2.0 V has been achieved.

• 2013-11-25

著者

• OHTA Akio

  Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University

• Murakami Hideki

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Ohta Akio

  Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Makihara Katsunori

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Makihara Katsunori

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Murakami Hideki

  Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

• Fukusima Motoki

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• FUKUSIMA Motoki

  Graduate School of Engineering, Nagoya University

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