Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
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概要
- 論文の詳細を見る
The drain current versus gate voltage characteristics of metal-oxide-semiconductor field-effect-transistors (MOSFETs) with silicon-quantum-dots (Si-QDs) layer floating gate have shown clear current bumps arising from the multiple-step charging of the QDs floating gate at room temperature. The transient drain current characteristics at constant positive gate biases indicate that the electron charging of the QDs floating gate proceeds stepwise, suggesting that the redistribution of injected electrons in the QDs floating gate proceeds as a result of the Coulomb interaction among charged QDs. It is suggested that not only the charged states of individual QDs but also the charged states of neighboring QDs are crucial factors for progressive electron charging.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Shimizu Yusuke
Department Of Applied Physics And Physico-informatics Keio University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Murakami Hideki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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Shimizu Yusuke
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ikeda Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan
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