Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
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概要
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The transient temperature profile during thermal plasma jet annealing has been investigated by optical reflectivity measurements. The transient reflectivity measured during the annealing shows oscillation, which originates from the changes in the refractive indices of a Si film and a quartz substrate with temperature. By analyzing the oscillation, we have successfully obtained the temperature profile during the annealing with a time resolution of milliseconds. As a result of such analysis when the power input to a plasma source is 2.2 kW, the surface temperature has been observed to increase from 1300 to 1560 K by decreasing the scan speed from 1000 to 500 mm/s.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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KAKU Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Murakami Hideki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Koba Naohiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Higashi Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Higashi Seiichiro
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Kaku Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Kaku Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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