Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-07-15

著者

• IKEDA Mitsuhisa

  Hiroshima University

• MIYAZAKI Seiichi

  Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Ikeda Makoto

  Faculty Of Technology Tokyo University Of Agriculture And Technology

• MURAKAMI Hideki

  Department of Geology, Faculty of Science, Kochi University

• Kohno Atsushi

  Department of Radiology, Kobe University

• Murakami H

  Institute For Molecular Science

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Ikeda M

  Sony Corporation Research Center

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Kohno Atsushi

  Department Of Electrical Engineering Hiroshima University

• Kohno A

  Operative Dentistry I Tsurumi University School Of Dental Medicine

• Kohno Atsushi

  Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki S

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• Murakami Hideki

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Murakami Hisashi

  Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T

• IKEDA Mitsuhisa

  Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ

• MIYAZAKI Seiichiand

  Department of Electrical Engineering, Hiroshima University

• Inayoshi Muneto

  Department Of Quantum Engineering School Of Engineering Nagoya Univeristy

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Ito M

  Wakayama Univ. Wakayama Jpn

• Murakami H

  Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T

• Ikeda M

  Toshiba Corp. Kawasaki Jpn

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Hirose M

  Materials Research Center Tdk Corporation

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Murakami Hisashi

  Department of Applied Chemistry, Tokyo University of Agriculture and Technology

• Kohno Atsushi

  Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jounan-ku, Fukuoka 814-0180, Japan

• Murakami Hideki

  Institute for Molecular Science

関連論文

• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Preliminary report on regional resistivity variation inferred from the Network MT investigation in the Shikoku district, southwestern Japan
• Total en bloc spondylectomy for spinal metastases
• Diamond Film Formation by OH Radical Injection from Remote Microwave H_2/H_2O Plasma into Parallel-Plate RF Methanol Plasma
• High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
• Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
• Recapping T-saw laminocostotransversoplasty for ventral meningiomas in the thoracic region
• Circumspinal decompression with dekyphosis stabilization for thoracic OPLL
• Finite-element analysis on closing-opening correction osteotomy for angular kyphosis of osteoporotic vertebral fractures
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
• Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
• Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
• Measurement of Carbon Atom Density in High Density Plasma Process
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
• Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
• Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
• RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
• CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
• ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
• ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
• 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
• Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
• AlGaInP Visible Semiconductor Lasers : COMPONENTS
• Modulation Type Pyroelectric IR Detector
• Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
• Special Section on High-κ Gate Dielectrics
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Relationship between Crystal Structure and Long-Time Response to DC Electric Field in Niobium-Doped BaTiO_3 Ceramics : Ferroelectrics
• Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
• Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
• Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
• Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
• Giant Resistivity Anomaly in A15 Nb_3(Ge, Si) Superconductive Films with Compositionally Modulated Superstructure
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

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