Modeling of Soft Breakdown in Ultrathin Gate Oxides

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• MIZUBAYASHI Wataru

  Department of Electrical Engineering, Hiroshima University

• ITOKAWA Hiroshi

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Faculty Of Engineering Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Miyazaki S

  Department Of Electrical Engineering Hiroshima University

• Itokawa Hiroshi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Mizubayashi Wataru

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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