Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, <Special Section>Fundamental and Application of Advanced

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We investigated the use of AlO_x : N/SiN_y stacked gate dielectric as an alternate gate dielectric, which were prepared by alternately repeating sub-nanometer deposition of Al_20_3 from an alkylaminestabilized AlH_3+N_20 gas mixture and rapid thermal nitridation in NH_3. The negative fix charges, being characteristics of almina, were as many as 3.9×10^<12> cm^<-2> in the effective net charge density. The effective dielectric constant and the breakdown field were 8.9 and 8 MV/cm, respectively, being almost the same as pure Al_20_3. And we have demonstrated that the leakage current through the AlO_x : N/SiN_y stacked gate dielectric with a capacitance equivalent thickness (CET) of 1.9 nm is about two orders of magnitude less than that of thermally-grown Si0_2. Also, we have confirmed the dielectric degradation similar to the stress-induced leakage current (SILC) mode and subsequent soft breakdown (SBD) reported in ultrathin Si0_2 under constant current stress and a good dielectric reliability comparable to thermally-grown ultrahin Si0_2. From the analysis of n^+poly-Si gate metal-insulator-semiconductor field effect transistor (MISFET) performance, remote coulomb scattering due to changes in the gate dielectric plays an important role on the mobility degradation of MISFET with AlON/SiON gate stack.
社団法人電子情報通信学会の論文
2005-04-01