Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure

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概要

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• Resistive switching of metal-insulator-metal (MIM), consisting of a metal-organic chemical vapour deposition (MOCVD) TiO2 layer sandwiched between Pt electrodes, has been measured systematically before and after thermal annealing in different ambiences. With H2 annealing at 400°C, the current level in the high-resistive state (HRS) significantly decreased while little change in the low-resistive state (LRS) was observed. As a result, the switching ratio over 7 orders of magnitude at the current level was obtained. From the analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic conduction, while in the HRS after H2 annealing, charge trapping became significant as a result of a significant decrease in the current level. In a separate experiment, a partial reduction in TiO2 was detected using high-resolution X-ray photoelectron spectroscopy (XPS) after resistant-state switching from HRS to LRS by using a Hg probe as a top electrode, which is associated with filament formation.

• 2011-05-01

著者

• MAKIHARA Katsunori

  Hiroshima University

• GOTO Yuta

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• OHTA Akio

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Goto Yuta

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Ohta Akio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Wei Guobin

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Makihara Katsunori

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Makihara Katsuonri

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Makihara Katsunori

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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