Ohta Akio | Graduate School Of Advanced Sciences Of Matter Hiroshima University
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概要
関連著者
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Higashi Seiichiro
Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Murakami Hideki
Graduate School Of Advanced Sciences And Matters Hiroshima University
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Higashi Seiichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Goto Yuta
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Wei Guobin
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Makihara Katsunori
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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GOTO Yuta
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI Seiichi
Hiroshima University
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MAKIHARA Katsunori
Hiroshima University
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Kanme Daisuke
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Makihara Katsunori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Makihara Katsuonri
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Makihara Katsunori
Graduate School of Advanced Sciences of Matter, Hiroshima University
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WEI Guobin
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KANME Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Makihara Katsunori
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Nishigaki Shingo
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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NAKAGAWA Hiroshi
Graduate School of Information Sciences, Hiroshima City University
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Tominaga Koji
Mirai-aset Aist
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SHIBAGUCHI Taku
Graduate School of Advanced Sciences and Matters, Hiroshima University
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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SUGIMURA Masashi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Sugimura Masashi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Shibaguchi Taku
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Shibaguchi Taku
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nakagawa Hiroshi
Graduate School Of Information Sciences Hiroshima City University
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Nakagawa Hiroshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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NISHIGAKI Shingo
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Sakuraba Masao
Research Institute of Electrical Communication, Tohoku University
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Itokawa Hiroshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mizushima Ichiro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Ohta Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Nishimura Tomoaki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Iwamoto Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Fukusima Motoki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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HASHIMOTO Kuniaki
Graduate School of Advanced Sciences of Matter, Hiroshima University
著作論文
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
- Evaluation of chemical structure and resistance switching characteristics of undoped titanium oxide and titanium-yttrium mixed oxide (Special issue: Dielectric thin films for future electron devices: science and technology)
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
- Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
- X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
- Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering