Makihara Katsunori | Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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著作論文

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
Formation of high-density Pt nanodots on SiO2 induced by millisecond rapid thermal annealing using thermal plasma jet for floating gate memory (Special issue: Dry process)
Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique
Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density (Special Issue : Solid State Devices and Materials (2))
Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum- Dots Hybrid Floating Gate in MOS Structures
Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Highly-Crystallized Ge:H Film Growth from GeH
Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization

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