ENDOH Tetsuo | Center for Interdisciplinary Research, Tohoku University
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概要
関連著者
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Endoh Tetsuo
Tohoku Univ. Sendai‐shi Jpn
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Endoh Testuo
Center For Interdisciplinary Research Tohoku University
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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Imamoto Takuya
Center For Interdisciplinary Research Tohoku University
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Sasaki Takeshi
Center For Interdisciplinary Research Tohoku University
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University
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Imamoto Takuya
Center for Interdisciplinary Research, Tohoku University
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Norifusa Yuto
Center for Interdisciplinary Research, Tohoku University
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Kamiyanagi Masashi
Center For Interdisciplinary Research Tohoku University
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Sasaki Takeshi
Center for Interdisciplinary Research, Tohoku University
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Norifusa Yuto
Center For Interdisciplinary Research Tohoku University
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Muraguchi Masakazu
Tohoku Univ. Sendai‐shi Jpn
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University:center For Spintronics Integrated Systems To
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Yasuda Yukio
Center For Interdisciplinary Research Tohoku University:jst Crest
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SAKUI Koji
Center for Interdisciplinary Research, Tohoku University
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Kamiyanagi Masashi
Center for Interdisciplinary Research, Tohoku University
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Takada Yukihiro
Graduate School of Pure and Applied Science, University of Tsukuba
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Nomura Shintaro
Graduate School of Pure and Applied Science, University of Tsukuba
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Takada Yukihiro
Univ. Tsukuba Tsukuba‐shi Jpn
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Sakui Koji
Center For Interdisciplinary Research Tohoku University:jst Crest
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Nomura Shintaro
Graduate School Of Pure And Applied Science University Of Tsukuba
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Sakui Koji
Center For Interdisciplinary Research Tohoku University
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Yasuda Yukio
Center For Interdisciplinary Research Tohoku University
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Koyanagi Mitsumasa
Cir Tohoku University
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Takada Yukihiro
Graduate School Of Pure And Applied Science University Of Tsukuba
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Na Hyoungjun
Center For Interdisciplinary Research Tohoku University
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Shiraishi Kenji
Graduate School Of Pure And Applied Science University Of Tsukuba
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MIURA Katsuya
Hitachi Advanced Research Laboratory
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HAYAKAWA Jun
Hitachi Advanced Research Laboratory
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Na Hyoungjun
Center for Interdisciplinary Research, Tohoku University
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Ohno Hideo
Tohoku Univ. Sendai Jpn
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Hasegawa Haruhiro
Riec Tohoku University
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Hanyu Takahiro
Riec Tohoku University
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Shiraishi Kenji
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Mizunuma Kotaro
Hitachi Advanced Research Laboratory
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Iwamoto Takuya
Center for Interdisciplinary Research, Tohoku University
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Sakurai Yoko
Graduate School Of Pure And Applied Science University Of Tsukuba
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Makihara Katsuonri
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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MAKIHARA Katsunori
Hiroshima University
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IKEDA Mitsuhisa
Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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HASEGAWA Haruhiro
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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OHNO Hideo
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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小柳 光正
東北大院工
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KAMIYANAGI Masashi
CIR, Tohoku University
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IGA Fumitaka
CIR, Tohoku University
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IKEDA Shoji
RIEC, Tohoku University
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HASEGAWA Haruhiro
RIEC, Tohoku University
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HANYU Takahiro
RIEC, Tohoku University
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OHNO Hideo
RIEC, Tohoku University
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ENDOH Tetsuo
CIR, Tohoku University
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Seo Moon-Sik
Center for Interdisciplinary Research, Tohoku University
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Sakurai Yoko
Graduate School of Pure and Applied Science, University of Tsukuba
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Makihara Katsuonri
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Shigeta Yasuteru
Graduate School of Life Science, University of Hyogo
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Suzuki Yasuhiko
Center for Interdisciplinary Research, Tohoku University
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Seo Moon-sik
Center For Interdisciplinary Research Tohoku University
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Miyazaki Seiichi
Hiroshima Univ.
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Endoh Testuo
Center for Interdisciplinary Research, Tohoku University
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Suzuki Yasuhiko
Center For Interdisciplinary Research Tohoku University
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Iga Fumitaka
Cir Tohoku University
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Tanaka Kousuke
Center For Interdisciplinary Research Tohoku University
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Koyanagi Mitsumasa
Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Matsunaga Shoun
Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University
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Shigeta Yasuteru
Graduate School Of Life Science University Of Hyogo
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Shigeta Yasuteru
Graduate School Of Engineering Science Osaka University
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Koyanagi Mitsumasa
Dept. Of Bioengineering And Robotics Tohoku University
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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HANYU Takahiro
Research Institute of Electrical Communication, Tohoku University
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Endoh Tetsuo
Tohoku Univ. Sendai
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Endoh Tetsuo
Tohoku Univ. Miyagi Jpn
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Norifusa Yuto
Center For Interdisciplinary Research Tohoku University:jst-crest
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Miura Katsuya
Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku
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Makihara Katsunori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hanyu Takahiro
Research Institute Of Electrical Communication Tohoku University
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MATSUNAGA Shoun
Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University
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HIYAMA Kimiyuki
Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University
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MATSUMOTO Atsushi
Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University
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HANYU Takahiro
Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University
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MATSUNAGA Shoun
Research Institute of Electrical Communication, Tohoku University
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Shigeta Yasuteru
Department Of Chemistry Graduate School Of Science Osaka Univerity
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Hiyama Kimiyuki
Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University:jst-crest
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OHSAWA Takashi
Center for Semiconductor Research & Development, Toshiba Corporation
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Togashi Shuta
Center For Interdisciplinary Research Tohoku University
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Ohsawa Takashi
Center For Spintronics Integrated Systems Tohoku University
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Endoh Tetsuo
Center for Interdisciplinary Research, Tohoku University:Center for Spintronics Integrated Systems, Tohoku University
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Endoh Tetsuo
Center for Interdisciplinary Research, Tohoku University:JST-CREST
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Makihara Katsunori
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Imamoto Takuya
Center for Interdisciplinary Research, Tohoku University:Center for Spintronics Integrated Systems, Tohoku University
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Muraguchi Masakazu
Center for Interdisciplinary Research, Tohoku University:Center for Spintronics Integrated Systems, Tohoku University
著作論文
- Impact of floating body type DRAM with the vertical MOSFET (Silicon devices and materials)
- Impact of floating body type DRAM with the vertical MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
- Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET (Electron devices)
- Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides)
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology)
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFETs and Double Gate MOSFETs with Halo Structure
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Design of 30nm FinFET with Halo Structure
- Sub-10nm Multi-Nano-Pillar Type Vertical MOSFET
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Future High Density Memory with Vertical Structured Device Technology
- Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
- Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor(Session5A: Si Devices II)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)
- Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism(Session5A: Si Devices II)
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
- Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
- Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process
- The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
- Low Power Nonvolatile Counter Unit with Fine-Grained Power Gating