MURAGUCHI Masakazu | Center for Interdisciplinary Research, Tohoku University

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概要

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著作論文

Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Silicon devices and materials)
Study on impurity distribution dependence of electron-dynamics in vertical MOSFET (Electron devices)
Study on Quantum Electro-Dynamics in Vertical MOSFET
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology)
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics)
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Study on Quantum Electro-Dynamics in Vertical MOSFET
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

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