Miyazaki Seiichi | Graduate School Of Advanced Sciences And Matters Hiroshima University
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概要
関連著者
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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MIYAZAKI Seiichi
Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Makihara Katsuonri
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MAKIHARA Katsunori
Hiroshima University
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi Seiichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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IKEDA Mitsuhisa
Hiroshima University
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Makihara Katsunori
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Makihara Katsunori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Makihara Katsunori
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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OHTA Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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GOTO Yuta
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Sakurai Yoko
Graduate School Of Pure And Applied Science University Of Tsukuba
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Goto Yuta
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Wei Guobin
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Nomura Shintaro
Graduate School Of Pure And Applied Science University Of Tsukuba
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University
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Takada Yukihiro
Graduate School Of Pure And Applied Science University Of Tsukuba
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OHTA Akio
Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Kaku Hirotaka
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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SHIMANOE Kazuhiro
Hiroshima University
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Shimanoe Kazuhiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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Takada Yukihiro
Graduate School of Pure and Applied Science, University of Tsukuba
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Nomura Shintaro
Graduate School of Pure and Applied Science, University of Tsukuba
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Takada Yukihiro
Univ. Tsukuba Tsukuba‐shi Jpn
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KAWANAMI Akira
Hiroshima University
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Kawanami Akira
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Kanme Daisuke
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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HIGASHI Seiichiro
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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MIHARA Tatsuyoshi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Mihara Tatsuyoshi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Shigeta Yasuteru
Graduate School Of Engineering Science Osaka University
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Ohta Akio
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Makihara Katsunori
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Sakurai Yoko
Graduate School of Pure and Applied Science, University of Tsukuba
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Makihara Katsuonri
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Shigeta Yasuteru
Graduate School of Life Science, University of Hyogo
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WEI Guobin
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KANME Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Goto Yuta
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
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KAKU Hirotaka
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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Endoh Testuo
Center For Interdisciplinary Research Tohoku University
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SHIBAGUCHI Taku
Graduate School of Advanced Sciences and Matters, Hiroshima University
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Yamashita Hiroki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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YAMADA Keisaku
Waseda Univ.
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AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kawanami Akira
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Yamashita Hiroki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Endoh Tetsuo
Tohoku Univ. Sendai‐shi Jpn
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YAMASHITA Hideo
Faculty of Engineering Hiroshima University
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Yamashita H
Hiroshima Univ Higashihiroshima
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Yamada Keisaku
Univ. Of Tsukuba
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Muraguchi Masakazu
Tohoku Univ. Sendai‐shi Jpn
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Shigeta Yasuteru
Graduate School Of Life Science University Of Hyogo
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University:center For Spintronics Integrated Systems To
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Shibaguchi Taku
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Shiraishi Kenji
Graduate School Of Pure And Applied Science University Of Tsukuba
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Nishigaki Shingo
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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Shiraishi K
Institute Of Physics University Of Tsukuba
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NAKAGAWA Hiroshi
Graduate School of Information Sciences, Hiroshima City University
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Tominaga Koji
Mirai-aset Aist
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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FURUKAWA Hirokazu
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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PEI Yanli
Graduate School of Advanced Sciences and Matter, Hiroshima University
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SAKAIKE Kohei
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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OKAMOTO Yoshihiro
Graduate School of Advanced Sciences and Matter, Hiroshima University
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MORIWAKI Yoshikazu
Graduate School of Advanced Sciences and Matter, Hiroshima University
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FUJITAKE Masafumi
Graduate School of Advanced Sciences and Matter, Hiroshima University
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AZUMA Daisuke
Graduate School of Advanced Sciences and Matter, Hiroshima University
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Pei Yanli
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Azuma Daisuke
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Yoshida E
Faculty Of Pharmaceutical Sciences Chiba University
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Yoshida Eiji
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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Yoshida E
Institute Of Applied Physics University Of Tsukuba
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Yokoi Hirokazu
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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Yokoi Hirokazu
Graduate School Of Advanced Sciences And Matters Hiroshima University:(present Address)matsushita Co
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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Miyazaki Siichi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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SHIMIZU Naoji
Department of Electrical Engineering, Hiroshima University
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YOSHIDA Eiji
Department of Electrical Engineering, Hiroshima University
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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TAMURA Chihiro
Univ. of Tsukuba
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HASUNUMA Ryu
Univ. of Tsukuba
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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UEDONO Akira
Univ. of Tsukuba
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OHTSUKA Shingo
Semiconductor Leading Edge Technologies, Inc. (Selete)
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WADA Tetsunori
Semiconductor Leading Edge Technologies, Inc. (Selete)
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Yamamoto K
Univ. Of Tsukuba
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Shimizu Naoji
Department Of Electrical Engineering Hiroshima University
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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SUGIMURA Masashi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SAITO Shin-ichi
Central Research Laboratory, Hitachi, Ltd.
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SHIMIZU Naofumi
NTT Optical Network Systems Laboratories
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Sugimura Masashi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Fujitake Masafumi
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Moriwaki Yoshikazu
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Yamamoto K
Kaneka Corporation
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Shimizu N
Department Of Electrical Engineering Hiroshima University
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Miyazaki Siichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Sakaike Kohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Ohtsuka Shingo
Semiconductor Leading Edge Technologies Inc. (selete)
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Wada Tetsunori
Semiconductor Leading Edge Technologies Inc. (selete)
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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MIZUBAYASHI Wataru
Graduate School of Advanced Sciences and Matters, Hiroshima University
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SUYAMA Atsushi
Graduate School of Advanced Sciences and Matters, Hiroshima University
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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HAYASHI Shohei
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Science
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Shiraishi Kenji
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Suyama Atsushi
Graduate School Of Advanced Sciences And Matters Hiroshima University:(present Address)rohm Corp.
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Hayashi Shohei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Shigeta Yasuteru
Department Of Chemistry Graduate School Of Science Osaka Univerity
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Shigeta Yasuteru
Institute For Picobiology Graduate School Of Life Science Univ Of Hyogo
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Mizubayashi Wataru
Graduate School Of Advanced Sciences And Matters Hiroshima University:(present Address)advanced Semi
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Yoshida Eiji
Department Of Dentistry For Children And Disable Person Division Of Oral Functional Science Hokkaido
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Iwata Jun-ichi
Center For Computational Science University Of Tsukuba
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Shibaguchi Taku
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Furukawa Hirokazu
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Matsumoto Kazuya
Department Of Applied Chemistry Kanagawa Institute Of Technology
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Okada Tatsuya
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Okamoto Yoshihiro
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Yoshida Eiji
Department Of Dental Engineering Tsurumi University School Of Dental Medicine
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Nakagawa Hiroshi
Graduate School Of Information Sciences Hiroshima City University
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Nakagawa Hiroshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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NISHIGAKI Shingo
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Inumiya Seiji
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Uedono Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ohmori Kenji
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
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Sakuraba Masao
Research Institute of Electrical Communication, Tohoku University
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Itokawa Hiroshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mizushima Ichiro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Toriumi Akira
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Ohta Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Nishimura Tomoaki
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-0046, Japan
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Nishigaki Shingo
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Wei Guobin
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Makihara Katsunori
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
著作論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
- Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
- Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
- Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using Atomic Force Microsope/Kelvin Probe Technique
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium--Yttrium Mixed Oxide
- Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
- Characterization of Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots
- Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
- Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
- X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
- Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
- Highly-Crystallized Ge:H Film Growth from GeH
- Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering