Yamada Keisaku | Nanotechnology Research Laboratories Waseda University
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概要
関連著者
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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YAMADA Keisaku
Waseda Univ.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Yamamoto K
Kaneka Corporation
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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Yamamoto K
Univ. Of Tsukuba
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CHIKYO Toyohiro
National Institute for Material Science
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ohmori Kenji
Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hettiarachchi Ranga
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Matsuki Takeo
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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Feng Wei
Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan
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MIYAZAKI Seiichi
Hiroshima University
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Zhao Ming
Department of Oral Pathology, Faculty of Dentistry, Hiroshima University
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SUZUKI Motofumi
Department of Global Agricultural Sciences, Graduate School of Agricultural and Life Sciences
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Chen Jun
National Agricultural Res. Center For Hokkaido Region Sapporo Jpn
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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Tachibana Akitomo
Department Of Engineering Physics And Mechanics Kyoto University
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Kimura Kenji
Dep. Of Micro Engineering Kyoto Univ.
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NAKAJIMA Kaoru
Department of Micro Engineering, Kyoto University
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UEMATSU Masashi
NTT Basic Research Laboratories, NTT Corporation
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KAMIYAMA Satoshi
Semiconductor Leading Edge Technologies, Inc.
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SHIRAISHI Kenji
Institute of Physics, University of Tsukuba
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SEKIGUCHI Takashi
National Insitute for Materials Science
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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TAMURA Chihiro
Univ. of Tsukuba
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HASUNUMA Ryu
Univ. of Tsukuba
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AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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NAKAMURA Kunio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Kimura Kenji
Department Of Micro Engineering Kyoto University
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Nakamura Kunio
Department Of Micro Engineering Kyoto University
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Ohno Takahisa
National Institute For Materials Science
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Yasutake K
Graduate School Of Engineering Osaka University
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Zhao Ming
Department Of Micro Engineering Kyoto University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Doi Kentaro
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Uematsu Masashi
Ntt Basic Research Laboratories
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Suzuki Motofumi
Department Of Micro Engineering Kyoto University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Yamada Keisaku
Univ. Of Tsukuba
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Zhao Ming
Department Of Dermatology Epigenetic Research Center Second Xiangya Hospital Central South Universit
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Uematsu Masashi
Ntt Basic Research Laboratories Ntt Corporation
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Watanabe Yasumasa
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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Uedono Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ohmori Kenji
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 513 Wasedatsurumaki-cho, Shinjuku, Tokyo 162-0041, Japan
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Fukata Naoki
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Takase Masami
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies, Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Mikazuki Yutaka
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Sugino Shinya
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Doi Tatsuki
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Szarek Pawel
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Senami Masato
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Sekiguchi Takashi
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Shimura Takayoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Umezawa Naoto
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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Miyazaki Seiichi
Grauate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Watanabe Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakamura Kunio
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Chen Jun
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohno Takahisa
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Suzuki Motofumi
Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Chikyo Toyohiro
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Chikyo Toyohiro
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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WATANABE Yasumasa
Department of Aeronautics and Astronautics, The University of Tokyo
著作論文
- High-resolution RBS analysis of Si-dielectrics interfaces
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Behavior of low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors for different impurity concentrations (Special issue: Dielectric thin films for future electron devices: science and technology)
- Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Electronic structure study of local dielectric properties of lanthanoid oxide clusters
- Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties