Yoshida Shiniti | Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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概要
- YOSHIDA Shinitiの詳細を見る
- 同名の論文著者
- Department Of Precision Science And Technology Graduate School Of Engineering Osaka Universityの論文著者
関連著者
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Yasutake Kiyoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Watanabe Yasumasa
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences The University Of Tokyo
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Yoshida Shiniti
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Nakajima Kaoru
Dep. Of Micro Engineering Kyoto Univ.
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Umezawa Naoto
National Inst. For Materials Sci. Ibaraki Jpn
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YASUTAKE Kiyoshi
Department of Precision Engineering, Faculty of Engineering, Osaka University
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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YAMADA Keisaku
Nanotechnology Research Laboratories, Waseda University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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YAMADA Keisaku
Waseda Univ.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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NAKAMURA Kunio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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YOSHIDA Shiniti
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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WATANABE Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Yamamoto K
Kaneka Corporation
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Yasutake K
Graduate School Of Engineering Osaka University
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc. (selete)
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Watanabe Yasumasa
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, 120-5-308 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041, Japan
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Chikyow Toyohiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies, Inc.
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Shimura Takayoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Umezawa Naoto
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
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YASUTAKE Kiyoshi
Graduate School of Engineering, Osaka University
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Watanabe Yasumasa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakamura Kunio
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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WATANABE Yasumasa
Department of Aeronautics and Astronautics, The University of Tokyo
著作論文
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties